IRF250SMD prelim. 7/00 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk v gs gate ? source voltage i d continuous drain current (v gs = 0 , t case = 25c) i d continuous drain current (v gs = 0 , t case = 100c) i dm pulsed drain current 1 p d power dissipation @ t case = 25c linear derating factor e as single pulse avalanche energy 2 dv/dt peak diode recovery 3 t j , t stg operating and storage temperature range t l package mounting surface temperature (for 5 sec) r q jc thermal resistance junction to case r q j?pcb thermal resistance junction to pcb (typical) 20v 22a 14a 88a 100w 0.8w/c 500mj 5.0v/ns ?55 to 150c 300c 1.25c/w 3c/w mechanical data dimensions in mm (inches)
absolute maximum ratings (t case = 25c unless otherwise stated) smd1 package notes 1) pulse test: pulse width 300ms, d 2% 2) @ v dd = 50v , l 3 1.5mh , r g = 25 w , peak i l = 22a , starting t j = 25c 3) @ i sd 22a , di/dt 190a/ m s , v dd bv dss , t j 150c , suggested r g = 2.35 w n?channel power mosfet features hermetically sealed surface mount package small footprint ? efficient use of pcb space. simple drive requirements lightweight high packing densities pad 1 ? gate pad 2 ? drain pad 3 ? source note: irfnxxx also available with pins 1 and 3 reversed. v dss 200v i d(cont) 14a r ds(on) 0.100 w w w w
IRF250SMD prelim. 7/00 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk parameter test conditions min. typ. max. unit v gs = 0 i d = 1ma reference to 25c i d = 1ma v gs = 10v i d = 14a v gs = 10v i d = 22a v ds = v gs i d = 250 m a v ds 3 15v i ds = 14a v gs = 0 v ds = 0.8bv dss t j = 125c v gs = 20v v gs = ?20v v gs = 0 v ds = 25v f = 1mhz v gs = 10v i d = 22a v ds = 0.5bv dss i d = 22a v ds = 0.5bv dss v dd = 100v i d = 22a r g = 2.35 w i s = 22a t j = 25c v gs = 0 i f = 22a t j = 25c d i / d t 100a/ m sv dd 50v electrical characteristics (t amb = 25c unless otherwise stated) drain ? source breakdown voltage temperature coefficient of breakdown voltage static drain ? source on?state resistance 1 gate threshold voltage forward transconductance 1 zero gate voltage drain current forward gate ? source leakage reverse gate ? source leakage input capacitance output capacitance reverse transfer capacitance total gate charge 1 gate ? source charge 1 gate ? drain (?miller?) charge 1 turn?on delay time rise time turn?off delay time fall time continuous source current pulse source current 2 diode forward voltage reverse recovery time reverse recovery charge forward turn?on time 200 0.29 0.100 0.105 24 9 25 250 100 ?100 3500 700 110 55 115 822 30 60 35 190 170 130 22 88 1.9 950 9.0 negligible 0.8 2.8 v v/c w v s ( w m a na pf nc nc ns a v ns m c nh bv dss d bv dss d t j r ds(on) v gs(th) g fs i dss i gss i gss c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f i s i sm v sd t rr q rr t on l d l s static electrical ratings notes 1) pulse test: pulse width 300ms, d 2% 2) repetitive rating ? pulse width limited by maximum junction temperature. dynamic characteristics source ? drain diode characteristics internal drain inductance (from centre of drain pad to die) internal source inductance (from centre of source pad to end of source bond wire) package characteristics ( w )
|
